| 摘要 |
A method of making a semiconductor device including an asymmetric field-effect transistor (100), comprising the steps of forming a dielectric structure (1404) over a first portion of a substrate comprising a first lightly doped drain region (1300), forming sidewall spacers adjacent said dielectric structure over a second portion of said substrate, forming an insulating layer (1601) adjoining said spacers over said second portion, selectively removing the spacers to form a gate oxide (1703) at their location, depositing a first layer comprising Si (1704), etching portions of said first layer and gate oxide to expose a part of said second substrate portion, depositing a second layer comprising Si (1801) over the resulting structure, etching said first and second layers comprising Si to form separate source (1904), first gate (1902), second gate (1903), and drain (1901) electrodes. A bipolar transistor (120) may be included in the semiconductor device and formed simultaneously with the field-effect transistor.
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