发明名称 NONVOLATILE MEMORY INCORPORATED SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS ACCESS DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which inhibits a nonvolatile memory from being written, read, and/or erased when a rewriting frequency is exceeded and guarantees the security of data of a program, etc., at the same time. SOLUTION: A counter control part 6 is provided which obtains a rewrite value by processing as specified the rewriting frequency of a counter 5 counting up or down each time the nonvolatile memory 3 is rewritten once and stores the rewrite value in a counter memory cell 7, and a memory control part 4 inhibits the nonvolatile memory 3 from being rewritten and/or read according to the rewrite value stored in the counter memory cell 7.
申请公布号 JP2000357118(A) 申请公布日期 2000.12.26
申请号 JP19990167341 申请日期 1999.06.14
申请人 SHARP CORP 发明人 KUROZUMI SHIGEHISA
分类号 G06F12/14;G06F12/00;G06F21/02;(IPC1-7):G06F12/00 主分类号 G06F12/14
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