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发明名称
A METHOD OF FORMING DUAL GATE OXIDE LAYERS OF VARYING THICKNESS ON A SINGLE SUBSTRATE
摘要
申请公布号
KR20010100005(A)
申请公布日期
2001.11.09
申请号
KR1020017008304
申请日期
2001.06.29
申请人
发明人
分类号
H01L21/336
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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