| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can ensure a photolithography and etching margin during contact hole formation and can carry out good wiring without exposing a wiring layer inside a contact hole. SOLUTION: A wiring layer is formed by dry-etching a silicon nitride film 5, a titanium nitride film 3 and a tungsten film 4 one by one. A silicon nitride film 7 on a wiring layer is formed thicker than a silicon nitride film 7 between wiring layers by forming a second insulation silicon nitride film 7 all over on conditions of 1.0 to 30 Torr and 600 to 1100 deg.C by employing a vacuum thermal CVD method. Then etch-back is carried out all over, the silicon nitride film 7 between wiring layers is removed and a sidewall of the silicon nitride film 7 is formed in a wiring layer side wall. Thereafter, a layer insulation film 8 is formed and a contact hole 10 is formed by etching.
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