| 摘要 |
PROBLEM TO BE SOLVED: To promptly form a uniform layer of a silicide-forming material. SOLUTION: An SiO2 pattern layer is formed on an Si wafer which constitutes a substrate W. After the substrate W, carrying the SiO2 pattern layer, is set in a first deposition unit 12 via a transporting device 10, a Ti layer is formed on the pattern layer and a contact layer is formed, by silicifying the Ti layer through irradiating of the Ti layer with a laser beam. Then the substrate W is set in a second deposition unit 14 via the transfer apparatus 10 and a TnN barrier layer is formed on the Ti layer. Thereafter, the substrate W is set in a third deposition unit 15 through the transfer apparatus 10 and a Cu main wiring layer is formed on the barrier layer.
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