发明名称 PROJECTION EXPOSURE SYSTEM, EXPOSURE METHOD, MANUFACTURING METHOD FOR SEMICONDUCTOR, AND ADJUSTING METHOD FOR PROJECTION OPTICAL SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a high-performance projection exposure system which is durable and superior in reproducibility, while an optical characteristics is rotationally assymetric about the optical axis of a projection optical system which remains in the projection optical system. SOLUTION: A projection exposure system is provided, which comprises a lighting optical system for illuminating a first object 35 and a projection optical system 36, which projects the image of the first object 35 which is illuminated with the illuminating optical system onto a second object 38 at a prescribed magnification. Between the first and second objects, optical means (1 and 2), having power of rotational assymetry about the optical axis of projection optical system, are provided. The optical means is so provided as to be rotatable around the optical axis of the projection optical system or as to be movable along the optical axis of the projection optical system, for correcting the optical characteristics remaining in the projection optical system, which is rotationally assymetic around the optical axis of the projection optical system. The projection optical system comprises an optical element, which is so worked as to correct error components and aberration components, being rotationally assymetric, which remain at random in the projection optical system.
申请公布号 JP2002015994(A) 申请公布日期 2002.01.18
申请号 JP20010164374 申请日期 2001.05.31
申请人 NIKON CORP 发明人 SASAYA TOSHIHIRO;ENDO KAZUMASA;USHIDA KAZUO
分类号 G02B13/24;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G02B13/24
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