发明名称 |
METHODS OF FORMING A NITRIDATED SURFACE ON A METALLIC LAYER AND PRODUCTS PRODUCED THEREBY |
摘要 |
A method of providing a stable interface between a metallic layer and a dielectric layer in a semiconductor device is provided. The method includes generating a remote nitrogen containing plasma and flowing activated nitrogen species, from the remote site to the location of the metallic layer. The activated nitrogen species are flowed over at least the surface of the metallic layer, where they react with the metallic surface to form a metal nitride. The treated layer can be used to provide a stable bottom electrode in a capacitor stack formation. |
申请公布号 |
WO02091452(A2) |
申请公布日期 |
2002.11.14 |
申请号 |
WO2002US14890 |
申请日期 |
2002.05.08 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SAHIN, TURGUT;NARWANKAR, PRAVIN;RAJAGOPALAN, RAVI |
分类号 |
C23C8/02;C23C8/36;C23C14/58;C23C28/00;H01L21/02;H01L21/285;H01L21/316 |
主分类号 |
C23C8/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|