发明名称 |
Laser process |
摘要 |
A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm<SUP>2</SUP>) provided that it satisfies the relation: <?in-line-formulae description="In-line Formulae" end="lead"?>log<SUB>10</SUB>N<=-0.02(E-350), <?in-line-formulae description="In-line Formulae" end="tail"?> where N is the number of shots of the pulsed laser beam.
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申请公布号 |
US2006194377(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20050321641 |
申请日期 |
2005.12.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ZHANG HONGYONG;ISHIHARA HIROAKI |
分类号 |
H01L21/20;H01L21/84;B23K26/00;B23K26/06;B23K26/067;B23K101/40;C23C14/58;C23C16/56;G02B13/00;G02B27/09;G02F1/00;G02F1/35;H01L21/00;H01L21/02;H01L21/26;H01L21/265;H01L21/268;H01L21/322;H01L21/324;H01L21/425;H01S3/00;H01S3/09;H01S3/097;H01S5/024 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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