MOS FIELD EFFECT TRANSISTOR HAVING TRENCH ISOLATION REGION AND METHOD OF FABRICATING THE SAME

摘要

An MOSFET having a trench isolation region and a method for fabricating the same are provided to restrain leakage current and to prevent thinning of an oxide layer by forming a thick edge insulating layer between a trench isolation region and an active region. A trench isolation region(202) is formed in a substrate(201) to define an active region. A source and a drain regions are spaced apart from each other between a channel region(209) in the active region. A gate electrode(208) is formed on the channel region between the source region and the drain region. A gate insulating layer is formed between the gate electrode and the channel region. An edge insulating layer(207) is formed between the trench isolation region and the active region, wherein the edge insulating layer has a relatively thick thickness compared to the gate insulating layer.