发明名称 FABRICATION OF SINGLE PHASE CUINS2 THIN FILM BY SEL METHOD
摘要 A method for fabricating a single phase CuInS2 thin film by using an SEL(Stacked Elemental Layer) method is provided to improve quality of an optical device by using a chemical composition ratio of Cu, In, and S. A method for fabricating a single phase CuInS2 thin film by using an SEL method includes a quantitative process for obtaining a chemical composition ratio of Cu, In, and S. The fabricating method further includes a process for depositing Cu, In, and S by using a vacuum deposition device. A stacked SEL layer is obtained by performing a deposition process using the vacuum deposition device. The stacked SEL layer is formed with three layers. The single phase CuInS2 thin film is formed by performing a thermal process.
申请公布号 KR20060131080(A) 申请公布日期 2006.12.20
申请号 KR20050051255 申请日期 2005.06.15
申请人 PARK, GYE CHOON 发明人 PARK, GYE CHOON
分类号 H01L21/20 主分类号 H01L21/20
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