| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a desired performance as a semiconductor device by realizing good denseness of the outermost layer and flatness of a surface in a bump wherein a low melting point metal including Sn is formed in the outermost layer by an electroless plating method. <P>SOLUTION: A semiconductor device 11 has a semiconductor substrate 12, a pad 13, an insulation film 14, and a bump 15. The bump 15 has an electroless Ni plating 19, first and second electroless Cu platings 21, 22, and a displacement Sn plating 23. The grain diameter of the second electroless Cu plating 22 is 2 μm or less and the grain diameter of Cu is small when compared to the first electroless Cu plating 21. The displacement Sn plating 23 is formed by displacing Cu of the second electroless Cu plating 22 with Sn, and has denseness in proportion to denseness of the second electroless Cu plating 22. Flatness of the surface of the displacement Sn plating 23 is improved. <P>COPYRIGHT: (C)2004,JPO |
