| 摘要 |
A CMOS image sensor and a method for fabricating the same are provided to protect a metal contact by forming an oxide layer for protecting the metal contact. An insulating layer(130) includes a BPSG which is formed on a semiconductor substrate(110). A cap layer(140) includes a USG which is formed on the insulating layer. An oxide layer(150) is formed on the cap layer. An etch process is performed to etch the oxide layer, the cap layer, and the insulating layer. A contact hole is formed by etching the oxide layer, the cap layer, and the insulating layer. The contact hole is filled with a conductive material. The oxide layer is formed with a poly-oxide layer. The conductive material includes tungsten. A contact is formed by planarizing the conductive material.
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