| 摘要 |
Methods are provided for the fabrication of multiple finger transistors. A method comprises forming a layer of gate-forming material overlying a semiconductor substrate and forming a layer of dummy gate material overlying the layer of gate-forming material. The layer of dummy gate material is etched to form a dummy gate and sidewall spacers are formed about sidewalls of the dummy gate. The dummy gate is removed and the layer of gate-forming material is etched using the sidewall spacers as a mask to form at least two gate electrodes.
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