Semiconductor wafer for use as donor wafer, has layer structure that stands under course or compression stress and another layer structure compensates tension with compression stress or tensile stress

摘要

The semiconductor wafer has a substrate (1) having a substrate material. The layer structure (2) stands under a course or a compression stress and another layer structure compensates tension with compression stress or tensile stress. The substrate material is silicon. The latter layer structure contains a layer, which has a silicon oxide, a silicon oxynitride or a silicon nitride standing under compression stress. The former layer structure has a silicon germanium layer standing under tensile stress. The former layer structure has a gallium arsenide layer standing under tensile stress. An independent claim is also included for a method for producing a semiconductor wafer.