| 发明名称 | Memory with temperature coefficient trimming | ||
| 摘要 | A device includes an array of memory cells, a temperature sensor to provide a temperature output, and a circuit. The circuit provides a bias voltage to bias a node of the array of memory cells based on the temperature output, a first voltage component independent of a temperature coefficient of the memory cells, and a second voltage component dependent on the temperature coefficient of the memory cells. The first voltage component is determined at a first temperature and the second voltage component is determined at a second temperature less than the first temperature. | ||
| 申请公布号 | US9368212(B1) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201514669705 | 申请日期 | 2015.03.26 |
| 申请人 | Micron Technology, Inc. | 发明人 | Pan Feng;Tang Qiang |
| 分类号 | G11C19/08;G11C16/06;G11C29/12 | 主分类号 | G11C19/08 |
| 代理机构 | Dicke, Billig & Czaja, PLLC | 代理人 | Dicke, Billig & Czaja, PLLC |
| 主权项 | 1. A device comprising: an array of memory cells; a temperature sensor to provide a temperature output; and a circuit to provide a bias voltage to bias a node of the array of memory cells based on the temperature output, a first voltage component independent of a temperature coefficient of the memory cells, and a second voltage component dependent on the temperature coefficient of the memory cells, the first voltage component determined at a first temperature, and the second voltage component determined at a second temperature less than the first temperature. | ||
| 地址 | Boise ID US | ||