Manufacturing method of semiconductor device comprising a capacitor element

摘要

A method for manufacturing a semiconductor device includes a capacitor element in which a capacitance dielectric film is provided between an upper electrode film and a lower electrode film, includes forming the lower electrode film over the semiconductor substrate, forming the capacitance dielectric film over the lower electrode film, and forming the upper electrode film over the capacitance dielectric film, wherein, an entire surface layer of the lower electrode film is formed of a polycrystalline titanium nitride. At the portion of the capacitance dielectric film where directly contacting the entire surface layer of the lower electrode is formed of a polycrystalline metal oxide, and the polycrystalline metal oxide is formed by an ALD method and inherits a crystallinity of the polycrystalline titanium nitride.

主权项

1. A method for manufacturing a semiconductor device comprising a capacitor element in which a capacitance dielectric film is provided between an upper electrode film and a lower electrode film, comprising steps of:
(a) forming the lower electrode film over the semiconductor substrate; (b) forming the capacitance dielectric film over the lower electrode film; and (c) forming the upper electrode film over the capacitance dielectric film, wherein, at the step (a), an entire surface layer of the lower electrode film is formed of a polycrystalline titanium nitride, wherein, at the step (b), a portion of the capacitance dielectric film where directly contacting the entire surface layer of the lower electrode is formed of a polycrystalline metal oxide, and wherein the polycrystalline metal oxide is formed by an ALD method and inherits a crystallinity of the polycrystalline titanium nitride.