Solid-state imaging apparatus, method of manufacturing the same, and electronic apparatus

摘要

A solid-state imaging apparatus includes a semiconductor substrate in which a charge transfer section configured to transfer a charge generated in a photoelectric conversion section is formed. The semiconductor substrate includes a surface that is formed in a convex shape in an area in which the charge transfer section is formed.

主权项

1. An imaging apparatus, comprising:
a semiconductor substrate including a semiconductor area of a first conductivity type, wherein the semiconductor area of the first conductivity type includes a first surface and a second surface, the first surface having convex-shaped portions including a first convex-shaped portion and a second convex-shaped portion; and a charge transfer section of a second conductivity type located between the first surface and the second surface of the semiconductor area of the first conductivity type, wherein,
the charge transfer section is configured to transfer a charge generated in a photoelectric conversion section, anda first end portion of the charge transfer section is located below the first convex-shaped portion, and a second end portion of the charge transfer section is located below the second convex-shaped portion.