Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels

摘要

A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film, and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

主权项

1. A semiconductor device comprising:
a substrate including first to third fins aligned in a first direction, a first trench extending between the first fin and the second fin, a second trench extending between the second fin and the third fin, each of the fins having a top surface and a side surface; a first field insulating film disposed in the first trench; a second field insulating film disposed in the second trench; a third insulating film extending, along a lower portion of the side surface of the second fin, in the first direction from the first insulating film to the second insulating film, and the third insulating film exposing the top surface and an upper portion of the side surface of the second fin; a first dummy gate disposed on the first field insulating film; and a second dummy gate at least partly disposed on the second field insulating film, wherein a lower surface of the second field insulating film is lower than a lower surface of the first field insulating film and a lower surface of the third insulating film.