| 发明名称 | Semiconductor device and manufacturing method thereof | ||
| 摘要 | A method of manufacturing a semiconductor structure includes receiving a substrate including a die pad disposed thereon; disposing a passivation over the substrate and around the die pad; disposing a polymer over the passivation; forming a post passivation interconnect (PPI) including an elongated portion and a via portion contacting with the die pad; depositing a metallic paste on the elongated portion of the PPI by a stencil; disposing a conductive bump over the metallic paste; and disposing a molding over the PPI and around the metallic paste and the conductive bump. | ||
| 申请公布号 | US9379076(B2) | 申请公布日期 | 2016.06.28 |
| 申请号 | US201414503795 | 申请日期 | 2014.10.01 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. | 发明人 | Hsieh Chen-Chih;Tsai Hao-Yi;Shih Chao-Wen;Chiang Yung-Ping;Yu Tsung-Yuan |
| 分类号 | H01L23/31;H01L23/544;H01L21/78;H01L23/00;H01L23/522;H01L23/528;H01L21/56;H01L21/768 | 主分类号 | H01L23/31 |
| 代理机构 | WPAT, P.C. Intellectual Property Attorneys | 代理人 | WPAT, P.C. Intellectual Property Attorneys ;King Anthony |
| 主权项 | 1. A method of manufacturing a semiconductor structure, comprising: receiving a substrate including a die pad disposed thereon; disposing a passivation over the substrate and around the die pad; disposing a polymer over the passivation; forming a post passivation interconnect (PPI) including an elongated portion and a via portion contacting with the die pad; depositing a metallic paste on the elongated portion of the PPI by a stencil including an aperture corresponding to a predetermined position of the elongated portion of the PPI; disposing a conductive bump over the metallic paste; and disposing a molding over the PPI and around the metallic paste and the conductive bump. | ||
| 地址 | Hsinchu TW | ||