Semiconductor arrangement comprising transmission line surrounded by magnetic layer

摘要

A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer surrounding a first transmission line and a magnetic layer surrounding the first dielectric layer. The magnetic layer increases the inductance of the transmission line. The semiconductor arrangement having the magnetic layer surrounding the first transmission line has increased impedance, which promotes current flow through the transmission line, without having increased resistance as compared to a semiconductor arrangement that does not have a magnetic layer. Increased resistance requires increased power, which results in a shorter semiconductor arrangement life span than the semiconductor arrangement without the increased resistance.

主权项

1. A semiconductor arrangement comprising:
a first transmission line having a first thickness and a first width, wherein:
the first thickness is different than the first width,the first thickness is measured between a bottom wall of the first transmission line and a top wall of the first transmission line, andthe first width is measured between a first sidewall of the first transmission line and a second sidewall of the first transmission line; a first dielectric layer surrounding the first transmission line and in contact with the top wall, the bottom wall, the first sidewall and the second sidewall of the first transmission line; a magnetic layer surrounding the first dielectric layer; and a second dielectric layer surrounding the magnetic layer and in contact with a top wall of the magnetic layer.