发明名称 Device for detecting a laser attack in an integrated circuit chip
摘要 A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.
申请公布号 US9379066(B2) 申请公布日期 2016.06.28
申请号 US201514686908 申请日期 2015.04.15
申请人 STMICROELECTRONICS (ROUSSET) SAS 发明人 Marinet Fabrice;Mercier Julien;Fort Jimmy;Sarafianos Alexandre
分类号 H01L29/76;H01L23/00;H01L27/06;H01L27/092;H01L29/732 主分类号 H01L29/76
代理机构 Gardere Wynne Sewell LLP 代理人 Gardere Wynne Sewell LLP
主权项 1. A circuit, comprising: a substrate of a first conductivity type; a bipolar transistor of a first type having a buried region within the substrate that is formed of the second conductivity type; wherein the buried region is configured to operate as a detector of variation in current flow between a base of said bipolar transistor and the substrate that are indicative of a laser beam directed at the substrate.
地址 Rousset FR