发明名称 |
Device for detecting a laser attack in an integrated circuit chip |
摘要 |
A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate. |
申请公布号 |
US9379066(B2) |
申请公布日期 |
2016.06.28 |
申请号 |
US201514686908 |
申请日期 |
2015.04.15 |
申请人 |
STMICROELECTRONICS (ROUSSET) SAS |
发明人 |
Marinet Fabrice;Mercier Julien;Fort Jimmy;Sarafianos Alexandre |
分类号 |
H01L29/76;H01L23/00;H01L27/06;H01L27/092;H01L29/732 |
主分类号 |
H01L29/76 |
代理机构 |
Gardere Wynne Sewell LLP |
代理人 |
Gardere Wynne Sewell LLP |
主权项 |
1. A circuit, comprising:
a substrate of a first conductivity type; a bipolar transistor of a first type having a buried region within the substrate that is formed of the second conductivity type; wherein the buried region is configured to operate as a detector of variation in current flow between a base of said bipolar transistor and the substrate that are indicative of a laser beam directed at the substrate. |
地址 |
Rousset FR |