Semiconductor structures and methods of manufacturing the same

摘要

A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench.

主权项

1. A method of forming a semiconductor device, comprising:
forming an insulating layer on a substrate; forming a first trench in the insulating layer; forming a mask layer in the first trench, the mask layer having a first thickness from a bottom surface of the first trench to a top surface of the mask layer; patterning the mask layer to form a mask that at least partially exposes a sidewall of the first trench, a portion of the mask adjacent to the exposed sidewall of the first trench having a second thickness that is smaller than the first thickness, wherein the sidewall of the first trench exposed by the mask makes an oblique angle with respect to a top surface of the substrate, and wherein the mask covers portions of the insulating layer beneath the sidewall of the first trench; etching the insulating layer to form a second trench in the insulating layer using the mask as an etching mask, the second trench being in fluid communication with the first trench, wherein a remaining insulation pattern structure, comprising the portions of the insulating layer that were covered by the mask, remains on the substrate between the first trench and the second trench after the insulating layer is etched to form the second trench; and forming a conductive pattern in the first trench and the second trench, wherein the conductive pattern covers the remaining insulation pattern structure.