Semiconductor device and method for manufacturing the same

摘要

A transistor including an oxide semiconductor, which has good on-state characteristics, and a high-performance semiconductor device including a transistor capable of high-speed response and high-speed operation. In the transistor including an oxide semiconductor, oxygen-defect-inducing factors are introduced (added) into an oxide semiconductor layer, whereby the resistance of a source and drain regions are selectively reduced. Oxygen-defect-inducing factors are introduced into the oxide semiconductor layer, whereby oxygen defects serving as donors can be effectively formed in the oxide semiconductor layer. The introduced oxygen-defect-inducing factors are one or more selected from titanium, tungsten, and molybdenum, and are introduced by an ion implantation method.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming an oxide semiconductor layer; forming a gate insulating layer over the oxide semiconductor layer; forming a gate electrode layer over the gate insulating layer; and forming a channel formation region, a source region, and a drain region in the oxide semiconductor layer by introducing elements into the oxide semiconductor layer for selectively forming oxygen defects in the source region and the drain region, wherein a concentration of the elements of the source region or the drain region is higher than that of the channel formation region, and wherein the elements are one or more selected from the group consisting of titanium, tungsten, and molybdenum.