SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR MAGNETIC ANISOTROPY MULTILAYERS

摘要

The present invention is directed to a spin transfer torque magnetic random access memory (STTMRAM) element comprising a composite free layer including one or more stacks of a bilayer unit that comprises an insulator layer and a magnetic layer with the magnetic layer having a variable magnetization direction substantially perpendicular to a layer plane thereof; a magnetic pinned layer having a first fixed magnetization direction substantially perpendicular to a layer plane thereof; a tunnel barrier layer formed between the composite free layer and the magnetic pinned layer; and a magnetic fixed layer coupled to the magnetic pinned layer through an anti-ferromagnetic coupling layer. The magnetic fixed layer has a second fixed magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to the first fixed magnetization direction.

主权项

1. A spin transfer torque magnetic random access memory (STTMRAM) element comprising:
a composite free layer including one or more stacks of a bilayer unit that comprises an insulator layer and a magnetic layer, said magnetic layer having a variable magnetization direction substantially perpendicular to a layer plane thereof; a magnetic pinned layer having a first fixed magnetization direction substantially perpendicular to a layer plane thereof; a non-magnetic tunnel barrier layer formed between said composite free layer and said magnetic pinned layer; and a magnetic fixed layer coupled to said magnetic pinned layer through an anti-ferromagnetic coupling layer, said magnetic fixed layer having a second fixed magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first fixed magnetization direction.