METHOD OF FORMING A HARDMASK MATERIAL LAYER

摘要

The present invention relates to a method to form a hard-mask material layer. More specifically, the method includes: a step of providing a substrate including a first area having relatively denser topology patterns, and a second area having relatively less dense topology patterns or not having any topology pattern; a step of forming a first hard-mask material layer to cover front sides of the first and second areas while filling gaps between the topology patterns of the first area; a step of thermally treating the first hard-mask material film to differentiate solvent solubility between parts between the topology patterns of the first area and the other parts; a step of removing the first hard-mask material layer formed on the front sides of the first and second areas, to make at least part of the first hard-mask material layer remain between the topology patterns of the first area; and a step of forming a second hard-disk material layer to cover the front sides of the first and second areas. Therefore, the present invention is capable of quickly obtaining a hard-mask layer with significantly improved flatness without additional pollution, and manufacturing a device with high precision.