发明名称 Composition for forming resist protection film for lithography and method for forming pattern of semiconductor device using the same
摘要 Provided are a composition for forming a resist protection film for lithography and a method for forming a pattern of a semiconductor device using the same. The composition comprises a repeat unit having a fluorine-containing functional group on a side chain thereof and contains a polymer having a weight average molecular weight of 2,000-100,000 and a solvent. The solvent containing 10-100 parts by weight of a material has a Hildebrand solubility parameter of 12.5-22.0, based on 100 parts by weight of the total weight thereof.
申请公布号 US9423692(B2) 申请公布日期 2016.08.23
申请号 US201514851934 申请日期 2015.09.11
申请人 Dongjin Semichem Co., Ltd. 发明人 Han Man Ho;Park Jong Kyoung;Kim Hyun Jin;Kim Jae Hyun
分类号 G03F7/11;G03F7/16;G03F7/38;G03F7/32;C09D133/16;C09D4/06;G03F7/004;G03F7/20;G03F7/34 主分类号 G03F7/11
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. A resist protective film composition for lithography, the composition comprising: a polymer having a weight average molecular weight of 2,000 to 100,000 comprising a repeating unit having a fluorine-containing functional group at a side chain of the polymer; and a solvent, wherein the solvent comprises a material which makes up 10 to 90 parts by weight based on 100 parts by weight of the total weight of the solvent; the material is at least one selected from 2,5-dimethyltetrahydrofuran, methyl hexanoate, 1,2-epoxypropane, 4-methyl-1,3-dioxane, 2-methoxy-1,3-dioxane, 2-ethyl-2-methyl-1,3-dioxane, dibutyl adipate, isoamyl acetate, cyclohexyl acetate, ethyl 3-oxohexanoate, 2,2,4,4-tetramethyl-3-pentanone, 2,4-dimethyl-3-pentanone, 4-heptanone, cyclopropyl methyl ketone, 3,3-dimethyl-2-butanone, and butyl acetate, and the polymer is at least one selected from Polymer 1; Polymer 2; Polymer 3; Polymer 4; Polymer 5; and Polymer 6:in the formula of Polymer 1, a is 100 parts by mole, and c is 10 to 900 parts by mole,in the formula of Polymer 2, a is 100 parts by mole, and b is 10 to 900 parts by mole,in the formula of Polymer 3, a is 100 parts by mole, b is 10 to 900 parts by mole, and c is 10 to 900 parts by mole,in the formula of Polymer 4, b1 is 100 parts by mole, and b2 is 10 to 900 parts by mole,in the formula of Polymer 5, a is 100 parts by mole, and b is 10 to 900 parts by mole, in the formula of Polymer 6, b1 is 100 parts by mole, and b2 is 10 to 900 parts by mole.
地址 KR
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