Mask plate, method for fabricating array substrate using the same, and array substrate

摘要

Embodiments of the invention provide a mask plate, a method for fabricating an array substrate using the mask plate, and an array substrate. The mask plate is used for fabricating the array substrate by a stitching exposure. The mask plate comprises 2n+1 mask patterns successively arranged and parallel to each other, where n is any natural number, each mask pattern includes a light-shielding pattern corresponding to a portion of a data signal line on the array substrate. The light-shielding patterns of two adjacent mask patterns are discontinuous, and the portions on both sides of the light-shielding pattern of the mask pattern located in the middle of the mask plate are asymmetric.

主权项

1. A method for fabricating a data signal line using a mask plate,
wherein the mask plate comprises a first mask pattern, a second mask pattern and a third mask pattern successively arranged in a horizontal direction and parallel to each other, the first mask pattern comprises a first light-shielding pattern, the second mask pattern comprises a second light-shielding pattern, the third mask pattern comprises a third light-shielding pattern, the first light-shielding pattern, the second light-shielding pattern and the third light-shielding pattern are disconnected from each other, and portions on both sides of the second light-shielding pattern are asymmetric; wherein the method comprises: providing a metal layer for forming a data signal line on a base substrate; coating a photoresist on the metal layer; performing exposure processes on the photoresist by using the mask plate; performing a developing process on the photoresist; and performing an etching process on the metal layer to form the data signal line; and wherein the method comprises: a first exposure process: shielding the second mask pattern and the third mask pattern and using the first mask pattern to perform the first exposure process on the photoresist to obtain a first photoresist pattern corresponding to the first light-shielding pattern of the first mask pattern; a second exposure process: moving the mask plate along the horizontal direction, shielding the first mask pattern and the third mask pattern and using the second mask pattern to perform the second exposure process on the photoresist to obtain a second photoresist pattern corresponding to the second light-shielding pattern of the second mask pattern, the second photoresist pattern is partially overlapped with the first photoresist pattern; a third exposure process: moving the mask plate along the horizontal direction, shielding the first mask pattern and the third mask pattern and using the second mask pattern again to perform the third exposure process on the photoresist to obtain a third photoresist pattern corresponding to the second light-shielding pattern of the second mask pattern, the third photoresist pattern is not overlapped with the second photoresist pattern; and a fourth exposure process: moving the mask plate along the horizontal direction, shielding the first mask pattern and the second mask pattern and using the third mask pattern to perform the fourth exposure process on the photoresist to obtain a fourth photoresist pattern corresponding to the third light-shielding pattern of the third mask pattern, the fourth photoresist pattern is partially overlapped with the third photoresist pattern.