Antiferromagnetic storage device

摘要

An antiferromagnetic nanostructure according to one embodiment includes an array of at least two antiferromagnetically coupled magnetic atoms having at least two magnetic states that are stable for at least one picosecond even in the absence of interaction with an external structure, the array having a net magnetic moment of zero or about zero, wherein the array has 100 atoms or less along a longest dimension thereof. An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero; two or more stable magnetic states; and having an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities.

主权项

1. An antiferromagnetic nanostructure, comprising:
multiple arrays of magnetic atoms each corresponding to a bit, each array of magnetic atoms having at least eight antiferromagnetically coupled magnetic atoms, each array of magnetic atoms having at least two readable magnetic states that are stable for at least one picosecond, and each array of magnetic atoms having a net magnetic moment of zero or about zero, wherein each array of magnetic atoms has magnetic moments that alternate between adjacent magnetic atoms along one or more directions, wherein no external stabilizing structure exerts influence over the arrays of magnetic atoms for stabilizing the arrays of magnetic atoms, and wherein each array of magnetic atoms has 100 atoms or less along a longest dimension.