| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME SEMICONDUCTOR DEVICE |
| 摘要 |
The semiconductor device includes a semiconductor layer in which a via hole penetrating an upper surface of the semiconductor layer to a lower surface of the semiconductor layer is provided. The semiconductor device includes a first insulating film provided over the lower surface of the semiconductor layer and an inner surface of the via hole. The semiconductor device includes a second insulating film provided over the lower surface of the semiconductor layer and the inner surface of the via hole with the first insulating film interposed between the second insulating film and the semiconductor layer. The semiconductor device includes a device layer including a semiconductor element and provided on the side of the upper surface of the semiconductor layer. |
| 申请公布号 |
US2016268163(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201615063187 |
申请日期 |
2016.03.07 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAMURA Kenro |
| 分类号 |
H01L21/768;H01L23/373;H01L23/48 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor layer in which a via hole penetrating an upper surface of the semiconductor layer to a lower surface of the semiconductor layer is provided; a first insulating film provided over the lower surface of the semiconductor layer and an inner surface of the via hole; a second insulating film provided over the lower surface of the semiconductor layer and the inner surface of the via hole with the first insulating film interposed between the second insulating film and the semiconductor layer; a device layer including a semiconductor element and provided on the side of the upper surface of the semiconductor layer; a lower electrode that is provided in the via hole with the first and second insulating films interposed between the lower electrode and the inner surface of the via hole and is electrically connected to the device layer; a protective insulating film that is provided on the upper surface of the semiconductor layer with the device layer interposed therebetween and protects the device layer; and an upper electrode that is provided to be opposed to the lower electrode with the device layer interposed therebetween and is electrically connected to the device layer. |
| 地址 |
Tokyo JP |
