发明名称 ウェーハの加工方法
摘要 PROBLEM TO BE SOLVED: To provide a wafer processing method capable of preventing wafer breakage when peeling a support member from a thinly ground wafer having high working efficiency.SOLUTION: A wafer processing method comprises the steps of: a first sticking step of sticking one adhesive layer (A1) of a double-sided adhesive tape (DT) to a rigid support member (S); a wafer mounting step of bringing a part of an outer periphery on a surface (W1) side of a wafer (W) to the other adhesive layer (A2) of the double-sided adhesive tape and mounting the wafer on the double-sided adhesive tape so as to bring down the wafer; a second sticking step of sticking the wafer to the rigid support member by pressing a rear surface (W2) side of the mounted wafer; a grinding step of thinning the wafer to a prescribed finishing thickness (t) by grinding the rear surface side of the wafer; an adhesive layer curing step of reducing an adhesive force by curing the adhesive layer of the double-sided adhesive tape by irradiating the adhesive layer with ultraviolet light (UV) through the rigid support member or the wafer; and a removal step of removing the rigid support member and the double-sided adhesive tape from the wafer.
申请公布号 JP6013850(B2) 申请公布日期 2016.10.25
申请号 JP20120214302 申请日期 2012.09.27
申请人 株式会社ディスコ 发明人 下谷 誠
分类号 H01L21/304;H01L21/301;H01L21/683 主分类号 H01L21/304
代理机构 代理人
主权项
地址