发明名称 METHOD OF FORMING SELF-ALIGNMENT AND SELF-EXPOSURE PHOTORESIST PATTERN ON LIGHT EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of forming a photoresist mask on a light emitting element. <P>SOLUTION: A part of the light emitting element is covered with photoresist. A part of the photoresist is exposed to light that is emitted from the inside of the light emitting element to irradiate an interface between the light emitting element and the photoresist. The photoresist is developed, and either the exposed photoresist or the unexposed photoresist is removed. In one implementation, a photoresist mask may be used for forming a fluorescent coating layer. The photoresist is developed, and the exposed photoresist is removed, and a fluorescent layer is deposited so as to cover the light emitting element. The unexposed part of the photoresist is removed. In another implementation, light to which the photoresist is exposed is generated by applying an electric bias to the light emitting element or by applying light to the light emitting element through an aperture or with a converging laser. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2003298106(A) 申请公布日期 2003.10.17
申请号 JP20030077030 申请日期 2003.03.20
申请人 LUMILEDS LIGHTING US LLC 发明人 COLLINS WILLIAM D III;SNYDER WAYNE L;STEIGERWALD DANIEL A
分类号 H01L33/00;H01L33/44;H01L33/50 主分类号 H01L33/00
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