| 摘要 |
<p>PURPOSE: To reduce defects and to improve an yield by providing step parts of at least one step or more at a cut part of a wiring and cutting a wiring at this step part by etching. CONSTITUTION: A base film 402 is deposited on a substrate 401, and a pattern of polycrystalline silicon being an active layer of a thin film transistor is formed on this film. At the same time, a step pattern 403 is formed at a position where a wiring is to be cut so as to cross a wiring. The whole surface is coated by a gate insulation film, and a gate wiring 404 is formed on it. Further, the whole surface is coated by a layer gap insulation film 405, and a contact hole for connecting a source wiring and a pixel electrode is opened. At the time, a contact hole 406 is also opened in a wiring cutting part. The whole surface is coated by a protective film 407 and an opening is opened on a pixel electrode, mounting terminal or the like. At this time a contact hole 408 is sopened on the wiring cutting part. Making the contact holes 406, 408 a mask, a wiring 404 is etched and cut.</p> |
