| 摘要 |
PURPOSE: To provide a dry process for executing a resist processing stage in lithography for super microfabrication of semiconductors by integral processing in vacuum. CONSTITUTION: A lower layer resist film 2 having high dry etching resistance to a substrate 3 which is to be worked, consists of Si, etc., and contains a benzene ring, etc., and an upper layer resist film 11 consisting of the deriv. of polymethacrylate contg. Si, etc., are successively deposited on this substrate by using polynm. reaction by plasma, light or heat in a vacuum chamber and thereafter, radicals are generated 7 on the front surface or the inside of the upper layer resist film by exposure with energy beams. Next, a monomer, such as styrene, is graft-polymerized with these radicals and the upper layer resist film is processed to a pattern form by dry etching 10 of gaseous halogen by utilizing the dry etching selectability of the exposed parts and the unexposed parts. Further, the lower layer resist is processed to the pattern form by dry etching of oxygen with these patterns as a mask. |
