CVD-SILICONCARBIDE-COATED MEMBER

摘要

PURPOSE: To obtain a CVD-SiC coated member, capable of more preventing a semiconductor from being contaminated by diffusion of impurities and excellent in adhesion. CONSTITUTION: This CVD-SiC-coated member is obtained by coating the surface of a substrate having a lower thermal expansion coefficient than that of CVD- SiC with an SiC film containing oxygen according to CVD. The oxygen concentration of the SiC film containing the oxygen is continuously or stepwise increased from the surface of the film in the substrate direction and is <=0.05wt.% in the surface layer and <=25wt.% in the bonding area layer to the substrate. A silicon crystal substance is used as the substrate and the contained oxygen concentration in the SiC film has <=1wt.%/μm concentration gradient from the surface layer in the film thickness direction.