| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the materialization of the thinning of itself, the improvement of heat radiation, and the materialization of multistage become possible, and its manufacturing method. SOLUTION: Mold resin 5b covers an IC chip 1, a wire 2, and a part of a die pad 3b. The die pad 3b is exposed from the mold resin 5b. An outer lead 4b is made as far as the surface side of the mold resin 5b on opposite side to the die pad 3b, along the mold resin, from the same plane as the exposed face of the die pad 3b. Accordingly, the thinning of the semiconductor device can be materialized, and by the exposure of the die pad 3b, the heat radiation property can be improved, and the progress into multistage of a semiconductor device becomes possible by making the outer lead 4b above and below the mold resin 5b. |
