A DUAL STACKED METAL-INSULATOR-METAL CAPACITOR AND METHOD FOR MAKING SAME

摘要

A multilayer semiconductor device and method of making a dual stacked metal-insulator-metal (MIM) capacitor of a multilayer semiconductor device, which includes a bottom metal layer including a capacitor plate and a wiring level, an intermediate metal layer forming at least a capacitor plate, and a top metal layer including a capacitor plate and a wiring level, a via that electrically contacts the intermediate metal layer, and at least two electrically connected vias that contact the bottom metal layer and the top metal layer. A dielectric etchstop layer may be formed above the dual stacked MIM capacitor.