| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve drive capability, without causing deterioration in element characteristics, and a method for manufacturing the device. SOLUTION: Formed on a silicon substrate 1 are a gate oxide film 5 and a gate electrode 6. A resultant structure is then subjected to an ion-implantation process with the use of B ions to form source and drain regions 2 and 3. First spacers 7a of an SiO2 film are formed on both sides of the gate electrode 6, and second spacers of an SiN film are formed on both the sides of the first spacers 7a. The implantation of B ions causes formation of high-concentration diffused layers 2a and 3a, on which a Ti layer is formed and then subjected to a heat treatment to form silicide films 8. After the removal of the second spacers, the structure is subjected to the B ion-implantation process to form high-concentration diffused regions 2c and 3c on the source and drain regions 2 and 3 between the first spacer 7a and silicide film 8. |
