发明名称 METHOD FOR FORMING LOW-IMPEDANCE HIGH-DENSITY DEPOSITED-ON-LAMINATE STRUCTURES HAVING REDUCED STRESS
摘要 <p>A method for forming low-impedance high density deposited-on-laminate (D/L) structures (10) having reduced stress features reducing metallization present on the laminate printed circuit board (12). In this manner, reduced is the force per unit area exerted on the dielectric material (30) disposed adjacent to the laminate material (16) which is typically present during thermal cycling of the structure.</p>
申请公布号 WO2000007222(A2) 申请公布日期 2000.02.10
申请号 US1999017434 申请日期 1999.07.30
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