Process to produce silicon single crystal and heating apparatus for this process

摘要

In the production of a silicon single crystal by pulling from a silicon melt in a quartz crucible, energy is supplied at least partially inductively by a spiral heater positioned below the crucible. Also claimed is a heater in the form of a wound spiral for heating a silicon-filled crucible, the spiral windings preferably being fixed on a bottom plate below the crucible by an electrically insulating material, preferably boron nitride.