| 摘要 |
PROBLEM TO BE SOLVED: To perform processes such as cleaning, etc., of a substrate by an ozone solution, in a state in which the processing effects immediately after it is generated are highest by a method, wherein the ozone solution is generated on the surface of the substrate by supplying ozone gas and a treating solution to the substrate. SOLUTION: Pure water is supplied to a pure water supply nozzle 14 through a pure water supply pipe 18 from a pure water supply source and is delivered from a delivering port of the pure water supply nozzle 14 to the surface of a wafer W accommodated in a treatment bath 10. At the same time as that, ozone gas is supplied from an ozone gas supply source through a gas supply pipe 22 to a gas jetting nozzle 16 and is sprayed from the jetting port of the gas jetting nozzle 16 toward the surface of wafer W in the treating bath 10. Thus, the ozone gas is melted in the pure water on the surface of the wafer W, thereby generating ozone water. A cleaning process of the wafer W is performed with the ozone water in a state in which cleaning effects are highest immediately after its generation.
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