发明名称 |
METHOD FOR MANUFACTURING CONTACT OF MULTI-LAYERED WIRING |
摘要 |
PURPOSE: A method for manufacturing a contact of a multi-layered wiring is provided to reduce resistance by improving a profile of an interconnection layer near a contact. CONSTITUTION: An insulating layer is evaporated on a lower first conductive layer. The insulating layer is patterned to form a contact hole exposing a part of the first conductive layer. A barrier metal layer is formed on the entire structure having the contact hole. A metal layer of a plug and a buffer insulating layer are consecutively evaporated. A photoresist layer is applied on the buffer insulating layer. The photoresist layer is patterned to form a photoresist layer pattern on the contact hole and buffer insulating layer. The buffer insulating layer is isotropically dry-etched by using the photoresist layer pattern as a mask to form a buffer insulating layer pattern of a taper shape. The buffer insulating layer pattern and the metal layer for a plug are etched-back to form a plug of which the surface is in parallel with the surface of the barrier metal layer.
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申请公布号 |
KR20000073502(A) |
申请公布日期 |
2000.12.05 |
申请号 |
KR19990016820 |
申请日期 |
1999.05.11 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
PARK, TAE HUI |
分类号 |
H01L27/06;(IPC1-7):H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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