发明名称 METHOD FOR MANUFACTURING CONTACT OF MULTI-LAYERED WIRING
摘要 PURPOSE: A method for manufacturing a contact of a multi-layered wiring is provided to reduce resistance by improving a profile of an interconnection layer near a contact. CONSTITUTION: An insulating layer is evaporated on a lower first conductive layer. The insulating layer is patterned to form a contact hole exposing a part of the first conductive layer. A barrier metal layer is formed on the entire structure having the contact hole. A metal layer of a plug and a buffer insulating layer are consecutively evaporated. A photoresist layer is applied on the buffer insulating layer. The photoresist layer is patterned to form a photoresist layer pattern on the contact hole and buffer insulating layer. The buffer insulating layer is isotropically dry-etched by using the photoresist layer pattern as a mask to form a buffer insulating layer pattern of a taper shape. The buffer insulating layer pattern and the metal layer for a plug are etched-back to form a plug of which the surface is in parallel with the surface of the barrier metal layer.
申请公布号 KR20000073502(A) 申请公布日期 2000.12.05
申请号 KR19990016820 申请日期 1999.05.11
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 PARK, TAE HUI
分类号 H01L27/06;(IPC1-7):H01L27/06 主分类号 H01L27/06
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