| 摘要 |
PROBLEM TO BE SOLVED: To simplify a process when an insulation film and a hard mask layer are continuously formed by a method wherein the hard mask layer is formed on the insulation film formed on a substrate, and also any one of the insulation film and the hard mask layer is formed by coating a coating agent. SOLUTION: According to this embodiment, as any one of an insulation film and a hard mask layer is formed by coating a coating agent, it is possible to simplify a process of forming a two-layer structure of the insulation layer and the hard mask layer without interposing a CVD unit. Specifically, a film forming apparatus comprises a carrier station 23 which mounts a coating part 21, a side cabinet (chemical liquid part) 22, and a wafer carrier for accommodating a plurality of semiconductor wafers W, and conveys in and out the wafers W. Furthermore, the apparatus comprises a curing part 24 for curing the wafers W after the coating liquid is coated by a batch processing, and an interface part 25 for transferring the wafers W between the coating part 21 and the curing part 24.
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