| 摘要 |
<p>A substrate processing method comprises providing a substrate (105) comprising etch resistant material (210) in a process zone (155), such as an energized gas zone in a process chamber (110). The etch resistant material (210) may comprise a resist material (230) over mask material (240). The process may further comprise removing the etch resistant material (210), such as the resist material (230), in the process zone (155) before etching underlying layers.</p> |
