摘要 |
PURPOSE: A multi bank memory device having a voltage sense amplifier and a current sense amplifier on a data line is provided to have lower power consumption and to have a uniform sensing speed on the data line. CONSTITUTION: The first and the second banks have a plurality of memory cells, and data of the memory cells are output to data lines(DL1,DL2,DL3,DL4). A voltage sense amplifier(320) is connected to a data line(FDL1) of the first bank, and senses and amplifies the memory cell data and then outputs it to a data pad. A current sense amplifier(322) is connected to a data line(FDL2) of the second bank, and senses and amplifies the memory cell data and then outputs it to the data pad. The data line of the second bank is longer than that of the first bank.
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