发明名称 MULTI BANK MEMORY DEVICE HAVING VOLTAGE SENSE AMPLIFIER AND CURRENT SENSE AMPLIFIER ON DATA LINE, IN WHICH POWER CONSUMPTION IS REDUCED
摘要 PURPOSE: A multi bank memory device having a voltage sense amplifier and a current sense amplifier on a data line is provided to have lower power consumption and to have a uniform sensing speed on the data line. CONSTITUTION: The first and the second banks have a plurality of memory cells, and data of the memory cells are output to data lines(DL1,DL2,DL3,DL4). A voltage sense amplifier(320) is connected to a data line(FDL1) of the first bank, and senses and amplifies the memory cell data and then outputs it to a data pad. A current sense amplifier(322) is connected to a data line(FDL2) of the second bank, and senses and amplifies the memory cell data and then outputs it to the data pad. The data line of the second bank is longer than that of the first bank.
申请公布号 KR20040081679(A) 申请公布日期 2004.09.22
申请号 KR20030016304 申请日期 2003.03.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, SANG JUN
分类号 G11C5/02;G11C7/06;G11C7/10;G11C11/4091;G11C11/4096;(IPC1-7):G11C7/06 主分类号 G11C5/02
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