| 发明名称 |
Method of preparing semiconductor member using an etching solution |
| 摘要 |
<p>A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.</p> |
| 申请公布号 |
EP1347505(A3) |
申请公布日期 |
2004.10.20 |
| 申请号 |
EP20030076425 |
申请日期 |
1992.02.14 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAKAGUCHI, KIYOFUMI;YONEHARA, TAKAO;SATO, NOBUHIKO |
| 分类号 |
H01L21/20;H01L21/306;H01L21/762;(IPC1-7):H01L21/306;H01L21/768 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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