| 摘要 |
A method for fabrication a semiconductor memory device is provided to reduce manufacturing costs and to simply manufacturing processes by using a single mask in pad/repair processing. A fuse(31) and a pad(32) are formed on a substrate, wherein the fuse and the pad are sequentially stacked on metal films(31a,32a) and ARC(Anti-Reflective Coating) layers(31b,32b), respectively. An insulating layer(30) is formed for covering the fuses and pads. The insulating layer is selectively removed to remain the upper of the fuse and to expose the pad. A photoresist pattern is formed to selectively expose the ARC layer(32b) of the pad. The exposed ARC layer of the pad is then removed by using the photoresist pattern as a mask.
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