发明名称 ZIRCONIUM-DOPED TANTALUM OXIDE FILMS
摘要 Dielectric layers containing a zirconium-doped tantalum oxide layer, where the zirconium-doped tantalum oxide layer is formed of one or more monolayers of tantalum oxide doped with zirconium, provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
申请公布号 US2007087563(A1) 申请公布日期 2007.04.19
申请号 US20060608281 申请日期 2006.12.08
申请人 MICRON TECHNOLOGY, INC. 发明人 AHN KIE Y.;FORBES LEONARD
分类号 H01L21/4763;H01L21/44 主分类号 H01L21/4763
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