SOLAR CELL DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a method suitable for manufacturing a solar cell device which has a high-concentration dopant layer near the outermost surface of a semiconductor substrate, while having a low-concentration dopant layer on a more inner side of the substrate than the high-concentration dopant layer. Specifically disclosed is a method comprising a step for heating a semiconductor substrate of a first conductivity type in a first atmosphere which contains a dopant of a second conductivity type at a first dopant concentration, another step for heating the semiconductor substrate heated in the first atmosphere in a second atmosphere having a second dopant concentration lower than the first dopant concentration, and a still another step for heating the semiconductor substrate heated in the second atmosphere in a third atmosphere having a third dopant concentration higher than the second dopant concentration.