METHOD FOR SCREENING SHORT DEFECT BETWEEN BIT LINE AND BURIED CONTACT EFFICIENTLY IN SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method is provided to screen short defect between a bit line and a buried contact efficiently in a semiconductor memory device with a short screen time. CONSTITUTION: According to the method for screening short defect between a bit line and a buried contact in a semiconductor memory device, the above semiconductor memory device is activated one time at first. Then, a disturb operation is performed repetitively during a refresh time defined in the specification of the semiconductor memory device. And the semiconductor memory device is precharged one time.