| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem in the conventional semiconductor manufacturing equipment that fluctuation in thickness of an epitaxial growth layer formed on a semiconductor substrate is large, hence yield of manufactured chips is decreased, and unstability occurs in quality. <P>SOLUTION: In a manufacturing method of the semiconductor substrate 10, a position where a center of the substrate 10 coincides with a center of a melting vessel 2 is set as a reference position. Reciprocating motion wherein the reference position is set as a center is applied to the melting vessel 2, thereby performing epitaxial growth. The dimension of the vessel 2 in the moving direction is 1.3 times or more of the outer diameter of the substrate 10. A wall part 2a of the vessel keeps an interval of at least 5 mm to the outer diameter of the substrate 10. The reciprocating motion is performed at a speed of at most 4.5 mm/sec for the whole period during growth process, thereby making the thickness of epitaxial growth layer uniform. <P>COPYRIGHT: (C)2004,JPO |
